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1

An exploration of GaAs structures for solid-state detectors

V.B. Chmill, A.V. Chuntonov, V.A. Sergeev, A.V. Smol, Yu.P. Tsyupa, A.P. Vorobiev, A.I. Gordienko, S.S. Khludkov, O.B. Koretskaya, A.I. Potapov, O.P. Tolbanov

Journal:

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Year:

1993

Language:

english

File:

PDF, 227 KB

english, 1993

2

Exploration of GaAs structures with π-ν junction for coordinate sensitive detectors

V.B. Chmill, A.V. Chuntonov, A.P. Vorobiev, S.S. Khludkov, A.V. Koretski, A.I. Potapov, O.P. Tolbanov

Journal:

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Year:

1994

Language:

english

File:

PDF, 735 KB

english, 1994

3

Radiation hard microstrip detector based on gallium arsenide

V.B Chmill, A.V Chuntonov, A.V Smoll, A.P Vorobiev, S.S Khludkov, A.A Koretski, A.I Potapov, O.P Tolbanov, K.M Smith

Journal:

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Year:

1996

Language:

english

File:

PDF, 267 KB

english, 1996

4

GaAs structures for X-ray imaging detectors

G.I. Ayzenshtat, N.N. Bakin, D.L. Budnitsky, E.P. Drugova, V.P. Germogenov, S.S. Khludkov, O.B. Koretskaya, L.S. Okaevich, L.P. Porokhovnichenko, A.I. Potapov, K.M. Smith, O.P. Tolbanov, A.V. Tyazhev,

Journal:

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Year:

2001

Language:

english

File:

PDF, 177 KB

english, 2001

5

Radiation resistance of GaAs structures

V.B. Chmill, A.V. Chuntonov, A.V. Smol, A.P. Vorobiev, S.S. Khludkov, A.A. Koretski, A.I. Potapov, O.P. Tolbanov

Journal:

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Year:

1997

Language:

english

File:

PDF, 479 KB

english, 1997

6

GaAs structures with deep centres for ionizing radiation detection

S.S. Khludkov, L.S. Okaevich, A.I. Potapov, O.P. Tolbanov

Journal:

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Year:

1997

Language:

english

File:

PDF, 221 KB

english, 1997

7

Proton-induced displacement damage in GaAs and radiation-hardness of semiconductor detectors for high energy physics

S.S. Khludkov, V.E. Stepanov, O.P. Tolbanov

Journal:

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Year:

1997

Language:

english

File:

PDF, 612 KB

english, 1997

8

Particle detector based on GaAs. Radiation hardness and spatial resolution

V.B Chmill, A.V Chuntonov, A.V Smol, A.P Vorobiev, S.S Khludkov, A.A Koretski, L.S Okaevitch, A.I Potapov, V.E Stepanov, O.P Tolbanov, K.M Smith

Journal:

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Year:

1998

Language:

english

File:

PDF, 120 KB

english, 1998

9

Investigation of transport and charge collection in particle detectors based on compensated GaAs

S.S Khludkov, O.B Koretskaya, L.S Okaevitch, A.I Potapov, O.P Tolbanov

Journal:

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Year:

1998

Language:

english

File:

PDF, 295 KB

english, 1998

10

Ionizing-radiation detectors based on GaAs with deep centers

G.I Aizenshtadt, V.G Kanaev, A.V Khan, S.S Khludkov, O.B Koretskaya, A.I Potapov, L.S Okaevich, A.V Tyazhev, O.P Tolbanov

Journal:

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Year:

2000

Language:

english

File:

PDF, 119 KB

english, 2000

11

Gallium arsenide structures with deep centers and ionized radiation detectors based on them

S. S. Khludkov, O. P. Tolbanov, D. L. Budnitskii

Journal:

Russian Physics Journal

Year:

1998

Language:

english

File:

PDF, 421 KB

english, 1998

12

Conductivity of high-resistance π layers and parameters of iron-doped GaAs diode structures

D. L. Budnitskii, A. I. Gossen, O. B. Koretskaya, S. S. Khludkov

Journal:

Russian Physics Journal

Year:

1998

Language:

english

File:

PDF, 272 KB

english, 1998

13

Diffusion and solubility of electrically active iron atoms in gallium arsenide

I. A. Prudaev, S. S. Khludkov

Journal:

Russian Physics Journal

Year:

2008

Language:

english

File:

PDF, 210 KB

english, 2008

14

The effect of base thickness on the reverse volt–ampere characteristic of an S-diode

I. A. Prudaev, S. S. Khludkov

Journal:

Russian Physics Journal

Year:

2009

Language:

english

File:

PDF, 289 KB

english, 2009

15

Special features of electrical activation of28Si in single-crystal and epitaxial GaAs subjected to rapid thermal annealing

V. M. Ardyshev, M. V. Ardyshev, S. S. Khludkov

Journal:

Year:

2000

Language:

english

File:

PDF, 63 KB

english, 2000

16

Effect of the insulator-gallium arsenide boundary on the behavior of silicon in the course of radiation annealing

V. M. Ardyshev, M. V. Ardyshev, S. S. Khludkov

Journal:

Year:

2000

Language:

english

File:

PDF, 48 KB

english, 2000

17

Chromium diffusion in gallium arsenide

S. S. Khludkov, O. B. Koretskaya, A. V. Tyazhev

Journal:

Year:

2004

Language:

english

File:

PDF, 50 KB

english, 2004

18

Chromium diffusion in GaAs in an open system

M. V. Ardyshev, I. A. Prudaev, O. P. Tolbanov, S. S. Khludkov

Journal:

Inorganic Materials

Year:

2008

Language:

english

File:

PDF, 190 KB

english, 2008

19

Switching diodes based on GaAs with deep impurity centers

Journal:

Instruments and Experimental Techniques

Year:

2009

Language:

english

File:

PDF, 158 KB

english, 2009

20

Switching avalanche S-diodes based on GaAs multilayer structures

I. A. Prudaev, S. S. Khludkov, M. S. Skakunov, O. P. Tolbanov

Journal:

Instruments and Experimental Techniques

Year:

2010

Language:

english

File:

PDF, 241 KB

english, 2010

21

A switching delay of avalanche S-diodes in optical-drive circuits

I. A. Prudaev, M. S. Skakunov, O. P. Tolbanov, S. S. Khludkov, K. M. Degtyarenko

Journal:

Instruments and Experimental Techniques

Year:

2011

Language:

english

File:

PDF, 159 KB

english, 2011

22

Diffusion of chromium in GaAs under equilibrium arsenic-vapor pressure

S. S. Khludkov, O. B. Koretskaya, G. R. Burnashova

Journal:

Year:

2006

Language:

english

File:

PDF, 150 KB

english, 2006

23

Influence of the electron-hole equilibrium shift on transition-metal diffusion in GaAs

Journal:

Year:

2006

Language:

english

File:

PDF, 176 KB

english, 2006

24

Effect of the state of vacancy equilibrium on diffusion of chromium impurity in gallium arsenide

Journal:

Year:

2008

Language:

english

File:

PDF, 125 KB

english, 2008

25

A study of the process of decomposition of supersaturated GaAs:Fe solid solution by scanning probe microscopy

S. S. Khludkov, I. A. Prudaev, V. V. Novikov, O. P. Tolbanov, I. V. Ivonin

Journal:

Year:

2010

Language:

english

File:

PDF, 468 KB

english, 2010

26

Gallium arsenide structures sensitive to ultraviolet radiation

D. L. Budnitskii, O. B. Koretskaya, A. V. Koretskii, O. P. Tolbanov, S. S. Khludkov

Journal:

Russian Physics Journal

Year:

1995

Language:

english

File:

PDF, 264 KB

english, 1995

27

Semiconducting structures and devices based on gallium arsenide with deep centers

S. S. Khludkov, O. P. Tolbanov

Journal:

Russian Physics Journal

Year:

1992

Language:

english

File:

PDF, 809 KB

english, 1992

28

Behavior of copper in gallium arsenide with a high concentration of tellurium

M. A. Krivov, É. N. Mel'chenko, S. S. Khludkov

Journal:

Russian Physics Journal

Year:

1979

Language:

english

File:

PDF, 361 KB

english, 1979

29

Investigation of the electrical and photoelectric properties of manganese-doped gallium arsenide as a material for photoresistive detectors

V. V. Antonov, A. V. Voitsekhovskii, M. A. Krivov, E. V. Malisova, É. N. Mel'chenko, M. P. Nikiforova, E. A. Popova, G. M. Fuks, S. S. Khludkov

Journal:

Russian Physics Journal

Year:

1981

Language:

english

File:

PDF, 338 KB

english, 1981

30

High-speed s-diodes with GaAs:Fe structure, produced by gas-phase epitaxy

M. D. Vilisova, G. M. Ikonnikova, O. P. Tolbanov, S. S. Khludkov

Journal:

Russian Physics Journal

Year:

1981

Language:

english

File:

PDF, 350 KB

english, 1981

31

Behavior of copper in gallium arsenide with high tin concentration

I. V. Kamenskaya, M. A. Krivov, E. V. Malisova, É. N. Mel'chenko, V. S. Morozov, M. P. Nikiforova, E. A. Popova, L. K. Tarasova, S. S. Khludkov

Journal:

Russian Physics Journal

Year:

1980

Language:

english

File:

PDF, 523 KB

english, 1980

32

Gallium arsenide avalanche-type S-diode based on a n+-π-ν-n structure

S. S. Khludkov, O. P. Tolbanov, A. V. Koretskii

Journal:

Russian Physics Journal

Year:

1986

Language:

english

File:

PDF, 380 KB

english, 1986

33

Gallium arsenide avalanche s-diodes

Journal:

Russian Physics Journal

Year:

1983

Language:

english

File:

PDF, 922 KB

english, 1983

34

Properties of n-type gallium arsenide doped with germanium when single crystals are grown from the melt

M. A. Krivov, E. V. Malisova, É. N. Mel'chenko, V. S. Morozov, M. P. Nikiforova, S. S. Khludkov, Yu. A. Grigor'ev, O. L. Egorova, V. B. Osvenskii

Journal:

Russian Physics Journal

Year:

1983

Language:

english

File:

PDF, 301 KB

english, 1983

35

Properties of epitaxial layers of p-type germanium-doped gallium arsenide

E. V. Malisova, M. P. Nikiforova, S. S. Khludkov

Journal:

Russian Physics Journal

Year:

1989

Language:

english

File:

PDF, 357 KB

english, 1989

36

Electrophysical properties of gallium arsenide in combination with impurity-doped germanium and isovalent indium and antimony impurities

M. A. Krivov, E. V. Malisova, M. P. Nikiforova, A. N. Starikov, S. S. Khludkov, Yu. A. Grigor'ev, O. L. Egorova, V. B. Osvenskii

Journal:

Russian Physics Journal

Year:

1987

Language:

english

File:

PDF, 428 KB

english, 1987

37

Investigation of the electrophysical and photoelectric properties of diffused layers of gallium arsenide obtained by compensation of copper

M. A. Krivov, E. V. Malisova, É. N. Mel'chenko, M. P. Nikiforova, E. A. Popova, L. K. Tarasova, S. S. Khludkov

Journal:

Russian Physics Journal

Year:

1977

Language:

english

File:

PDF, 474 KB

english, 1977

38

Behavior of copper in gallium arsenide with a high tellurium concentration

I. V. Kamenskaya, M. A. Krivov, E. V. Malisova, V. C. Morozov, M. P. Nikiforova, E. A. Popova, S. S. Khludkov

Journal:

Russian Physics Journal

Year:

1979

Language:

english

File:

PDF, 489 KB

english, 1979

39

Investigation of the perfection of diffusion layers obtained in the diffusion of zinc in gallium arsenide

B. G. Zakharov, S. S. Khludkov

Journal:

Russian Physics Journal

Year:

1966

Language:

english

File:

PDF, 929 KB

english, 1966

40

Gallium nitride as a material for spintronics

Khludkov, S. S., Prudaev, I. A., Тоlbanov, О. P.

Journal:

Russian Physics Journal

Year:

2013

Language:

english

File:

PDF, 427 KB

english, 2013

41

Physical properties of indium nitride, impurities, and defects

Khludkov, S. S., Prudaev, I. A., Tolbanov, O. P.

Journal:

Russian Physics Journal

Year:

2014

Language:

english

File:

PDF, 226 KB

english, 2014

42

Lithium

Khludkov, S. S., Prudaev, I. A., Tolbanov, O. P.

Journal:

Reactions Weekly

Year:

2014

Language:

english

File:

PDF, 218 KB

english, 2014

43

Tosedostat

Khludkov, S. S., Prudaev, I. A., Tolbanov, O. P.

Journal:

Reactions Weekly

Year:

2014

Language:

english

File:

PDF, 219 KB

english, 2014

44

Antipsychotics

Khludkov, S. S., Prudaev, I. A., Tolbanov, O. P.

Journal:

Reactions Weekly

Year:

2014

Language:

english

File:

PDF, 219 KB

english, 2014

45

Temperature Dependence of the Quantum Efficiency of Structures with Multiple Quantum Wells InGaN / GaN Under Photo- and Electroluminescence

Prudaev, I. A., Romanov, I. S., Kop’ev, V. V., Shirapov, S. B., Тоlbanov, О. P., Khludkov, S. S.

Journal:

Russian Physics Journal

Year:

2013

Language:

english

File:

PDF, 396 KB

english, 2013

46

Influence of temperature on the mechanism of carrier injection in light-emitting diodes based on InGaN/GaN multiple quantum wells

Prudaev, I. A., Golygin, I. Yu., Shirapov, S. B., Romanov, I. S., Khludkov, S. S., Tolbanov, O. P.

Journal:

Year:

2013

Language:

english

File:

PDF, 268 KB

english, 2013

47

Electrical Properties OF GaAs Doped with Iron

Khludkov, S. S., Prudaev, I. A., Novikov, V. A., Budnitskii, D. L., Lopatetskaya, K. S.

Journal:

Russian Physics Journal

Year:

2014

Language:

english

File:

PDF, 211 KB

english, 2014

48

Decomposition of a supersaturated solid solution of Fe in GaAs

I. A. Prudaev,S. S. Khludkov,A. K. Gutakovskii,V. A. Novikov…

Journal:

Inorganic Materials

Year:

2012

Language:

english

File:

PDF, 1.10 MB

english, 2012

49

[IEEE 2011 International Siberian Conference on Control and Communications (SIBCON 2011) - Krasnoyarsk, Russia (2011.09.15-2011.09.16)] 2011 International Siberian Conference on Control and Communications (SIBCON) - Switching delay of avalanche S-diodes in circuit with optical drive

Prudaev, I. A., Skakunov, M. S., Tolbanov, O. P., Khludkov, S. S., Degtyarenko, K. M.

Year:

2011

Language:

english

File:

PDF, 380 KB

english, 2011

50

[IEEE 2009 International Siberian Conference on Control and Communications (SIBCON 2009) - Tomsk, Russia (2009.03.27-2009.03.28)] 2009 International Siberian Conference on Control and Communications - Transformation of current-voltage characteristics of GaAs π-ν-n-structures under modification of π-layer resistance

Prudaev, I.A., Skakunov, M.S., Khludkov, S.S.

Year:

2009

Language:

english

File:

PDF, 239 KB

english, 2009